RFUS20NS6S_11 Datasheet, PDF (1/4 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFUS20NS6S
Series
Ultra Fast Recovery
Dimensions(Unit : mm)
Applications
General rectification
Data Sheet
Land size figure(Unit : mm)
Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common single type
Construction
Silicon epitaxial planer
Taping dimensions(Unit : mm)
Structure
②
①
③
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V_RM
Reverse voltage
V_R
Duty0.5
Direct voltage
600
V
600
V
Average rectified forward current
Io
60Hz half sin wave resistive load ,
1/2 Io per diode
Tc=36C
20
A
Forward current surge peak
I_FSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
100
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to 150 C
Electrical characteristics(Tj=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V_F
I_R
trr
Rth(j-c)
Conditions
I_F=20A
V_R=600V
I_F=0.5A,I_R=1A,Irr=0.25×I_R
junction to case
Min. Typ.
-
2.4
-
0.05
-
23
-
-
Max.
2.8
10
35
2
Unit
V
μA
ns
C/W
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2011.06 - Rev.A