RFUS20NS4S_11 Datasheet, PDF (1/5 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFUS20NS4S
lSeries
Ultra Fast Recovery
lDimensions (Unit : mm)
lApplications
General rectification
RFUS20
NS4S
①
Data Sheet
lLand size figure (Unit : mm)
lFeatures
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common single type
lConstruction
Silicon epitaxial planer
ROHM : LPDS
JEITA : TO263S
① Manufacture Year, Week and Day
lTaping dimensions (Unit : mm)
lStructure
②
①
③
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V_RM
Duty≤0.5
430
V
Reverse voltage
V_R
Direct voltage
430
V
Average rectified forward current
Io
60Hz half sin wave resistive load , Tc=47°C
20
A
Forward current surge peak
I_FSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25℃
100
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
-55 to +150 C
lElectrical characteristics (Tj=25C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery time (*)
Thermal resistance (*)
V_F
I_F=20A
－
I_R
V_R=430V
－
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
－
Rth(j-c)
junction to case
－
(*) Design assurance without measurement.
Typ.
Max.
1.4
1.6
0.06
10
24
35
－
2.5
Unit
V
μA
ns
°C/W
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2011.10 - Rev.A