RFUS10TF4S Datasheet, PDF (1/5 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFUS10TF4S
lSeries
Standard Fast Recovery
lDimensions (Unit : mm)
lApplications
General rectification
lFeatures
1)Single type.(TO-220)
2)High switching speed
RFUS10
TF4S
①
②
Data Sheet
lStructure
lConstruction
Silicon epitaxial planer
ROHM : TO220NFM
① Manufacture Year
② Manufacture Week
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V_RM
Duty≤0.5
430
V
Reverse voltage
V_R
430
V
Average rectified forward current
Io
60Hz half sin wave, Resistance load, _Tc=82°C
10
A
60Hz half sin wave, Non-repetitive
Forward current surge peak
I_FSM
one cycle peak value, Tj=25°C
80
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
-55 to +150 C
lElectrical characteristics (Tj=25C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
V_F
I_F=10A
－
I_R
V_R=430V
－
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
－
Rth(j-c)
junction to case
－
Typ.
Max.
1.45
1.7
0.05
10
19
30
－
3
Unit
V
μA
ns
°C/W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A