RFUH30TS6S Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFUH30TS6S
lSerise
Standard Fast Recovery
lDimensions (Unit : mm)
lApplication
General rectification
lFeatures
1) Ultra low switching loss
2) High current overload capacity
RFUH30
TS6S
1
2
lConstruction
Silicon epitaxial planar type
ROHM : TO247
1 : Manufacture Year
2 : Manufacture Week
Data Sheet
lStructure
lAbsolute maximum ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
600
V
Reverse voltage
V_R
Direct voltage
600
V
Average current
I_o
60Hz half sin wave, Resistive load T_c=85°C
30
A
60Hz half sin wave, Non-repetitive
Non-repetitive forward surge current I_{FSM at Tj=25°C, 1-3 pin common}
150
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical characteristics (T_j = 25°C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Reverse recovery time
trr
Thermal resistance
R_th(j-c)
Conditions
I_F=30A
V_R=600V
I_F=0.5A,I_R=1A,Irr=0.25×I_R
Junction to case
Min. Typ. Max. Unit
1.5 2.2 2.8 V
- 0.1 10 mA
- 25 35 ns
-
- 0.8 °C / W
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2014.06 - Rev.A