RFUH20TJ6S Datasheet, PDF (1/9 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFUH20TJ6S
Data Sheet
lSerise
Standard Fast Recovery
lDimensions (Unit : mm)
f3.1±0.1
10.2±0.2
4.5±0.1
2.6±0.1
lStructure
lApplication
General rectification
lFeatures
1) Super fast recovery / Soft recovery type
2) Ultra low switching loss
3) High current overload capacity
RFUH20
TJ6S
1
2
1.4±0.2
Cathode Anode
2.6±0.1
lConstruction
Silicon epitaxial planar type
2.54±0.1
0.83±0.1
5.08±0.1
0.6±0.1
ROHM : TO220ACFP
1 : Manufacture year, week,day, package code
2 : Serial number
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
600
V
Reverse voltage
V_R
Direct reverse voltage
600
V
Average current
I_o
60Hz half sin wave , resistive load Tc=30°C
20
A
Non-repetitive forward surge current I_FSM ^{60Hz half sin wave, one cycle, non-repetitive at T}j^=25°C
120
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical Characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
V_F
I_F=20A
T_j=25°C _1.4
T_j=125°C _-
Reverse current
I_R
V_R=600V
T_j=25°C _-
T_j=125°C _-
Reverse recovery time
I_F=0.5A, I_R=1A, Irr=0.25×I_{R -}
trr
I_F=20A, V_R=400V, dI_F/dt=-200A/ms -
Reverse recovery current
Reverse recovery charges
I_Rp
Qrr
I_F=20A, V_R=400V
dI_F/dt=-200A/ms
T_j=125°C
-
-
Forward recovery time
Forward recovery voltage
tfr
I_F=20A, dI_F/dt=200A/ms,
-
V_Fp
V_FR=1.1xV_Fmax
-
Thermal resistance
R_th(j-a)
Junction to ambient
-
R_th(j-c)
Junction to case
-
Typ.
1.9
1.5
0.1
15
18
40
5.7
340
220
4.1
-
-
Max. Unit
2.8 V
-V
10 mA
200 mA
35 ns
80 ns
-A
- nC
- ns
-V
7.5 °C/W
2.5 °C/W
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1/5
2015.05 - Rev.A