RFUH20TB3S Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFUH20TB3S
zSerise
Super Fast Recovery
zDimensions(Unit : mm)
zApplications
General rectification
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Data Sheet
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zStructure
zFeatures
1)Ultra low switching loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
FUH20T
B3S Õ±
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2.54d0.^㻔5^{㻝㻕 㻔㻞㻕 㻔㻟㻕} 2.54d0.5
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ROHM : TO220FN
Õ± Manufacture Year Week
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zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Forward current surge peak
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
Conditions
Duty䍺0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=52°C
60Hz half sin wave , Non-repetitive at Tj=25°C
zElectrical Characteristics(Tj=25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery time
V_F
I_F=20A
䠉
I_R
V_R=350V
䠉
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
䠉
Thermal resistance
Rth(j-c)
Junction to case
䠉
Limits
350
350
20
100
150
55 to 150
Typ.
Max.
1.3
1.5
0.05
10
16
25
䠉
2.5
Unit
V
V
A
A
°C
°C
Unit
V
μA
ns
°C/W
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2012.06 - Rev.A