RFUH20NS3SFH Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFUH20NS3SFH
zSerise
Super Fast Recovery
zDimensions(Unit : mm)
zApplications
General rectification
RFUH20
NS3S
Õ±
zFeatures
1)Ultra low switching loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
ROHM : LPDS
JEITA : TO263S
Õ± _{Manufacture Date}
zTaping Dimensions(Unit : mm)
Data Sheet
AEC-Q101 Qualified
zLand Size Figure(Unit : mm)
LPDS
zStructure
zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Symbol
Repetitive peak reverse voltage
V_RM
Reverse voltage
V_R
Average rectified foward current
Io
Forward current surge peak
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
Conditions
Duty䍺0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=32°C
60Hz half sin wave , Non-repetitive at Tj=25°C ^(*1)
zElectrical Characteristics(Tj=25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
V_F
I_F=20A
䠉
Reverse current
Reverse recovery time
I_R
V_R=350V
䠉
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
䠉
Thermal resistance
Rth(j-c)
Junction to case
䠉
Limits
Unit
350
V
350
V
20
A
100
A
150
°C
55 to 150
°C
(*1) 1-3pin common circuit
Typ.
Max.
Unit
1.3
1.5
V
0.05
10
μA
16
25
ns
䠉
3.0
°C/W
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2012.06 - Rev.A