RFUH10TB4SFH Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFUH10TB4SFH
zSerise
Super Fast Recovery
zDimensions(Unit : mm)
zApplications
General rectification
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Data Sheet
AEC-Q101 Qualified
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zStructure
zFeatures
1)Ultra low switching loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
FUH10T
B4S Õ±
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2.54d0.^㻔5^{㻝㻕 㻔㻞㻕 㻔㻟㻕} 2.54d0.5
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ROHM : TO220FN
Õ± Manufacture Year Week
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zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Symbol
V_RM
V_R
Io
Forward current surge peak
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
Conditions
Duty䍺0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=90°C
60Hz half sin wave , Non-repetitive at Tj=25°C
zElectrical Characteristics(Tj=25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
V_F
I_F=10A
䠉
Reverse current
Reverse recovery time
I_R
V_R=430V
䠉
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
䠉
Thermal resistance
Rth(j-c)
Junction to case
䠉
Limits
430
430
10
80
150
55 to 150
Typ.
Max.
1.4
1.7
0.05
10
15
25
䠉
3.0
Unit
V
V
A
A
°C
°C
Unit
V
μA
ns
°C/W
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㻌 2012.06 - Rev.A