RFUH10NS4S Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFUH10NS4S
zSerise
Super Fast Recovery
zDimensions(Unit : mm)
zApplications
General rectification
RFUH10
NS4S
䐟㻌
zFeatures
1)Ultra low switching loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
ROHM : LPDS
JEITA : TO263S
Õ± _{Manufacture Date}
zTaping Dimensions(Unit : mm)
Data Sheet
zLand Size Figure(Unit : mm)
LPDS
zStructure
zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
$YHUDJHUHFWLILHGIRZDUGFXUUHQW
Forward current surge peak
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
Conditions
Duty䍸0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=70°C
60Hz half sin wave , Non-repetitive at Tj=25°C
zElectrical Characteristics(Tj=25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery Time
V_F
I_F=10A
䠉
I_R
V_R=430V
䠉
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
䠉
Thermal resistance
Rth(j-c)
Junction to case
䠉
Limits
Unit
430
V
430
V
10
A
80
A
150
°C
55 to 150
°C
(*1) 1-3pin common circuit
Typ.
Max.
Unit
1.4
1.7
V
0.05
10
μA
15
25
ns
䠉
4.0
°C/W
WWWROHMCOM
Ú2/(-#O,TD!LLRIGHTSRESERVED
1/4
2012.06 - Rev.A