RFU5TF6S_11 Datasheet, PDF (1/4 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFU5TF6S
Series
Ultra Fast Recovery
Dimensions(Unit : mm)
+0.3
−0.1
Applications
General rectification
+0.3
−0.1
+0.2
−0.1
Features
1)Single type.(TO-220)
2)Ultra high switching speed
Construction
Silicon epitaxial planer
+0.1
−0.05
Data Sheet
Structure
(1)
(3)
Absolute maximum ratings(Tc=25C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V_RM
Duty0.5
600
V
Reverse voltage
V_R
Direct voltage
600
V
Average rectified forward current
Io
60Hz half sin wave, Resistance load, Tc=93C
5.0
A
Forward current surge peak
I_FSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
60
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to 150 C
Electrical characteristics(Tj=25C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Reverse recovery time (*)
trr
Thermal resistance(*)
Rth(j-c)
(*) : Design assurance without measurement.
Conditions
I_F=5.0A
V_R=600V
I_F=0.5A,I_R=1A,Irr=0.25×I_R
junction to case
Min. Typ.
-
2.2
- 0.02
-
15
-
-
Max.
2.8
10
25
4
Unit
V
μA
ns
C/W
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2011.06 - Rev.A