RFU10TF6S_11 Datasheet, PDF (1/4 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFU10TF6S
Series
Ultra Fast Recovery
Dimentions(Unit : mm)
Applications
General rectification
Features
1)Single type.(TO-220)
2)Ultra High switching speed
Construction
Silicon epitaxial plnner
(1)
(3)
Data Sheet
Structure
(1) (3)
Absolute maximum ratings(Tc=25C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
600
V
Reverse voltage
V_R
Direct voltage
600
V
Average rectified forward current
Io
60Hz half sin wave, Resistance load, _Tc=50C
10
A
Forward current surge peak
I_FSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
100
A
Junction temperature
Tj
Storage temperature
Tstg
150
C
55 to 150
C
Electrical characteristics(Tj=25C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Reverse recovery time
trr
Thermal Resistance
Rth(j-c)
Conditions
I_F=10A
V_R=600V
I_F=0.5A,I_R=1A,Irr=0.25×I_R
junction to case
Min.
Typ. Max. Unit
-
2.3
2.8
V
-
0.03
10
μA
-
16
25
ns
-
-
3.5 _{C / W}
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.06 - Rev.A