RFU02VS8S Datasheet, PDF (1/5 Pages) Rohm – Super Fast Recovery Diode

Data Sheet
Super Fast Recovery Diode
RFU02VS8S
Series
Ultra Fast Recovery
Applications
High frequency rectification
Dimensions (Unit : mm)
1.3±0.05
0.17±0.1
　　 0.05
Land size figure (Unit : mm)
1.1
Features
1)Small mold type.(TUMD2S)
2)high switching speed
TUMD2S
Structure
Construction
Silicon epitaxial planer
0.8±0.05
ROHM : TUMD2S
0.6±0.2
　　　 0.1
dot (year week factory) + day
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
　　　　　 0
0.25±0.05
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Repetitive peak Reverse voltage V_RM
Reverse voltage
V_R
Average rectified forward current
Io
Forward current surge peak
Junction temperature
Storage temperature
I_FSM
Tj
Tstg
1.43±0.05
4.0±0.1
φ1.0±0.2
　　　　　0
0.9±0.08
Conditions
D≤0.5
Direct voltage
Glass epoxy substrate mounted
R-road, 60Hz half sin wave
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Limits
Unit
800
V
800
V
0.2
A
1
A
150
C
55 to 150 C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward voltage
Reverse current
Reverse recovery time
V_F
I_F=0.2A
－
2.2
3.0
V
I_R
V_R=800V
－
0.01
10
μA
trr
I_F=0.1A,I_R=0.1A,Irr=0.1×I_R
－
20
35
ns
Reverse recovery time
trr
I_F=0.1A,I_R=0.2A,Irr=0.1×I_R
－
13
25
ns
Thermal capacitance
Ct
V_R=0V,f=1MHz
－
4
－
pF
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2011.10 - Rev.A