RFN5TF8SFH Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN5TF8SFH
zSerise
Standard Fast Recovery
zApplications
General rectification
zFeatures
1)Low switching Loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
zDimensions(Unit : mm)
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ROHM : ä °O220NFM
Õ± Manufacture Year
Õ² Manufacture Week
Data Sheet
AEC-Q101 Qualified
zStructure
zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Symbol
V_RM
V_R
Io
Forward current surge peak
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
Conditions
Duty䍺0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=106°C
60Hz half sin wave , Non-repetitive at Tj=25°C
Limits
800
800
5
60
150
55 to 150
zElectrical Characteristics(Tj=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V_F
I_R
trr
Rth(j-c)
Conditions
I_F=5A
V_R=800V
I_F=0.5A,I_R=1A,Irr=0.25×I_R
Junction to case
Min.
Typ.
Max.
䠉
1.6
2.1
䠉
0.05
10
䠉
20
40
䠉
䠉
3.5
Unit
V
V
A
A
°C
°C
Unit
V
μA
ns
°C/W
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2012.06 - Rev.A