RFN5B2S Datasheet, PDF (1/5 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN5B2S
Applications
General rectification
Features
1)Power mold type. (CPD)
2)Low switching loss
3)High current overload capacity
Construction
Silicon epitaxial planer
Dimensions (Unit : mm)
C0.5
6.5±0.2
5.1±0.2
　　　 0.1
2.3±0.2
　　　 0.1
0.5±0.1
①
0.75
0.9
（1） ^{（2） （3）}
0.65±0.1
2.3±0.2 2.3±0.2
ROHM : CPD
JEITA : SC-63
① Manufacture Date
0.5±0.1
1.0±0.2
Taping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
Data Sheet
Land size figure (Unit : mm)
6.0
1.6
1.6
CPD
2.3 2.3
Structure
φ1.55±0.1
　　　　　 0
0.4±0.1
TL
6.8±0.1
8.0±0.1
φ3.0±0.1
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak Reverse voltage V_RM
Duty≤0.5
200
V
Reverse voltage
V_R
Direct voltage
200
V
Average rectified forward current
Io
60Hz half sin wave,resistive load Tc=82°C
5
A
Forward current surge peak
I_FSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
40
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to 150 C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery time
V_F
I_F=5A
－
I_R
V_R=200V
－
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
－
Thermal Resistance
Rth(j-c)
junction to lead
－
Typ.
Max.
0.90
0.98
0.01
10
13
25
－
12
2.7±0.2
Unit
V
μA
ns
°C/W
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2011.12 - Rev.A