RFN3BM6S_16 Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN3BM6S
Data Sheet
lSeries
Standard Fast Recovery
lDimensions (Unit : mm)
lLand Size Figure (Unit : mm)
6.0
lApplication
General rectification
lFeatures
1) Low switching loss
2) Low forward voltage
lConstruction
Silicon epitaxial planar type
1.6 1.6
1
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
lTaping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
TO-252 2.3 2.3
lStructure
Cathode
φ 1.55±0.1
　^f　^1.　⁵　⁵　^00^.1
Open Anode
0.4±0.1
TL
6.8±0.1
8.0±0.1
fφ3.30.00±.10.1
2.7±0.2
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
600
V
Reverse voltage
V_R
Direct voltage
600
V
Average rectified foward current
I_o
60Hz half sin wave , Resistive load T_c=112°C
3
A
Forward current surge peak
I_FSM ^{60Hz half sin wave ,Non-repetitive at T}j^=25°C
20
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical Characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
V_F
I_F=3A
- 1.35 1.55 V
Reverse current
I_R
V_R=600V
- 0.05 10 mA
Reverse recovery time
trr ^I_F^{=0.5A, I}_R^{=1A, Irr=0.25×I}_R - 18 30 ns
Thermal resistance
R_th(j-c)
Junction to case
-
- 6.0 °C / W
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2016.02 - Rev.C