RFN30TS6S Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN30TS6S
lSerise
Standard Fast Recovery
lDimensions (Unit : mm)
lApplication
General rectification
lFeatures
1) Low switching loss
2) Low forward voltage
3) High current overload capacity
RFN30
TS6S
1
2
lConstruction
Silicon epitaxial planar type
ROHM : TO247
1 : Manufacture Year
2 : Manufacture Week
Data Sheet
lStructure
lAbsolute maximum ratings (T_a= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
600
V
Reverse voltage
V_R
Direct voltage
600
V
Average current
I_o 60Hz half sin wave, Resistive load
30
A
60Hz half sin wave, Non-repetitive
Non-repetitive forward surge current I_{FSM at Tj=25°C, 1-3 pin common}
200
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical characteristics (T_j = 25°C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Reverse recovery time
trr
Thermal resistance
R_th(j-c)
Conditions
I_F=30A
V_R=600V
I_F=0.5A,I_R=1A,Irr=0.25×I_R
Junction to case
Min. Typ. Max. Unit
1.0 1.3 1.55 V
- 0.05 10 mA
- 36 60 ns
-
- 0.8 °C / W
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2014.06 - Rev.A