RFN30TS2D Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN30TS2D
Data Sheet
lSerise
Standard Fast Recovery
lDimensions (Unit : mm)
lStructure
lApplication
General rectification
lFeatures
1) Low switching loss
2) Low forward voltage
3) High current overload capacity
RFN30
TS2D
1
2
Anode Cathode Anode
lConstruction
Silicon epitaxial planar type
ROHM : TO-247
1 : Manufacture year
2 : Manufacture week
lAbsolute Maximum Ratings (T_a= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
200
V
Reverse voltage
V_R
Direct voltage
200
V
Average current
I_o
60Hz half sin wave , resistive load 1/2I_o per diode
30
A
Non-repetitive forward surge current I_FSM ^{60Hz half sin wave, non-repetitive at T}j^{=25°C, per diode}
180
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical Characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
V_F
I_F=15A
0.75 0.89 0.98 V
Reverse current
I_R
V_R=200V
-
- 10 mA
Reverse recovery time
trr ^I_F^{=0.5A, I}_R^{=1A, Irr=0.25×I}_R - 20 35 ns
Reverse recovery current
Reverse recovery charges
I_Rp
I_F=15A, V_R=160V _{Tj=125°C -}
9.0
-
A
Qrr dI_F/dt=-200A/ms
- 200 - nC
Forward recovery time
tfr
I_F=15A, dI_F/dt=200A/ms,
- 165 - ns
Forward recovery voltage
V_Fp
V_FR=1.1xV_Fmax
- 5.5 - V
Thermal resistance
R_th(j-a)
R_th(j-c)
Junction to ambient
Junction to case
-
- 2.0 °C/W
-
- 0.9 °C/W
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2016.09 - Rev.A