RFN2LAM4S Datasheet, PDF (1/7 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN2LAM4S
Data Sheet
lSeries
Standard Fast Recovery
lApplications
General rectification
lDimensions (Unit : mm)
2.50±0.20
(1)
0.17±
0.10
0.05
lLand Size Figure (Unit : mm)
2.0
PMDTM
lFeatures
1) Low forward voltage
2) Low switching loss
3) High current overload capacity
(2)
1.50±0.20
0.95±0.10
ROHM : PMDTM
JEDEC : SOD-128
: Manufacture Date
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
lStructure _Cathode
Anode
lAbsolute Maximum Ratings (T_l= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
V_RM
Reverse voltage
V_R
Average forward rectified current
I_o
Non-repetitive forward surge current I_FSM
Junction temperature
T_j
Storage temperature
T_stg
lElectrical Characteristics (T_j= 25°C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Reverse recovery time
trr
Thermal resistance
R_th(j-l)
Conditions
Limits Unit
Duty≦0.5
400
V
Direct reverse voltage
400
V
Glass epoxy board mounted,
60Hz half sin wave, resistive load ^{Tｌ=102°C}
1.5
A
60Hz half sin wave,
non-repetitive at T_j=25ºC
50
A
-
150
°C
-
-55 to +150 °C
Conditions
I_F=1.5A
V_R=400V
I_F=0.5A, I_R=1A, Irr=0.25×I_R
Junction to lead
Min. Typ. Max. Unit
0.65 0.88 1.2 V
-
-
1 mA
- 22 30 ns
-
- 25 °C/W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2017.02 - Rev.A