RFN2L4SDD Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN2L6SDD
Datasheet
Series
Dimensions (Unit : mm)
AEC-Q101 Qualified
Land Size Figure (Unit : mm)
Standard Fast Recovery
2.0
Application
General rectification
6₇
9⁶
Features
1) Low forward voltage
1
2
2) Low switching loss
ROHM : PMDS
JEDEC : SOD-106
1
2 : Manufacture Date
Construction
Taping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05
4.0±0.1
PMDS
Structure
Cathode
φ1.55±0.05
Anode
0.3
2.9±0.1
Absolute Maximum Ratings (T_l= 25°C)
Parameter
Symbol
4.0±0.1
φ1.55
2.8MAX
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
600
V
Reverse voltage
V_R
Direct voltage
600
V
Average current
I_o
On glass epoxy substrate,
60Hz half sin wave , Resistive load ^Tl=89ºC
1.5
A
Non-repetitive forward surge current I_FSM ^{60Hz half sin wave, Non-repetitive at T}j^=25ºC
40
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
55 to 150 °C
Electrical Characteristics (T_j= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
Reverse recovery time
V_F
I_F=1.5A
- 1.2 1.55 V
I_R
V_R=600V
- 0.01 1 A
trr ^I_F^{=0.5A, I}_R^{=1A, Irr=0.25×I}_R - 16 35 ns
Thermal resistance
R_th(j-l)
Junction to Lead
-
- 23 °C/W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.10 - Rev.A