RFN2L4S Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Data Sheet
Super Fast Recovery Diode
RFN2L4S
zSerise
Standard Fast Recovery
zApplications
General rectification
zFeatures
1)Small power mold type(PMDS)
2)Low switching loss
3)Low forward voltage
zConstruction
Silicon epitaxial planer type
zDimensions(Unit : mm)
㻞㻚㻢㼼㻜㻚㻞
zLand Size Figure(Unit : mm)
2.0
8^{㻢㻌 㻢}7^㻌
䐟㻌 䐠㻌
㻝㻚㻡㼼㻜㻚㻞
㻜㻚㻝㼼㻜㻚㻜㻞
䚷䚷䚷㻌㻜㻚㻝
㻞㻚㻜㼼㻜㻚㻞
ROHM : PMDS
JEDEC : SOD-106
Õ± Õ² Manufacture Date
PMDS
zStructure
zTaping Dimensions(Unit : mm)
㻞㻚㻜㼼㻜㻚㻜㻡
㻠㻚㻜㼼㻜㻚㻝
φ 㻝㻚㻡㻡㼼㻜㻚㻜㻡
㻜㻚㻟
zAbsolute Maximum Ratings(Tl=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Symbol
V_RM
V_R
Io
Forward current surge peak
Junction temperature
Storage temperature
I_FSM
Tj
Tstg
zElectrical Characteristics(Tj=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V_F
I_R
trr
Rth(j-l)
㻞㻚㻥㼼㻜㻚㻝
㻠㻚㻜㼼㻜㻚㻝
Conditions
Duty䍸0.5
Direct voltage
On glass epoxy substrate,
60Hz half sin wave , Resistive load
Tl=107°C
60Hz half sin wave , Non-repetitive at Tj=25°C
Conditions
Min.
I_F=1.5A
䠉
V_R=400V
䠉
I_F=0.5A,I_R=1A,Irr=0.25×I_R
䠉
Junction to lead
䠉
φ 㻝㻚㻡㻡
Limits
400
400
1.5
50
150
55 to 150
Typ.
Max.
0.88
1.2
0.01
1
22
30
䠉
23
㻞㻚㻤㻹㻭㼄
Unit
V
V
A
A
°C
°C
Unit
V
μA
ns
°CW
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2012.06 - Rev.A