RFN20TJ6S Datasheet, PDF (1/6 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN20TJ6S
Data Sheet
lSeries
Standard Fast Recovery
lApplication
General rectification
lFeatures
1) Low forward voltage
2) Low switching loss
3) High current overload capacity
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
f3.1±0.1
10.2±0.2
4.5±0.1
2.6±0.1
lStructure
RFN20
TJ6S ₁
2
1.4±0.2
Cathode Anode
2.6±0.1
2.54±0.1
0.83±0.1
5.08±0.1
0.6±0.1
ROHM : TO220ACFP
1 : Manufacture year, week,day, package code
2 : Serial number
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
600
V
Reverse voltage
V_R
Direct reverse voltage
600
V
Average current
I_o
60Hz half sin wave , resistive load Tc=50°C
20
A
Non-repetitive forward surge current I_FSM ^{60Hz half sin wave, one cycle, non-repetitive at T}j^=25°C
150
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical Characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
V_F
I_F=20A
T_j=25°C _1.0
T_j=125°C _-
Reverse current
I_R
V_R=600V
T_j=25°C _-
T_j=125°C _-
Reverse recovery time
trr
I_F=0.5A, I_R=1A, Irr=0.25×I_R
-
I_F=20A, V_R=400V, dI_F/dt=-100A/ms -
Forward recovery time
Forward recovery voltage
tfr
I_F=20A, dI_F/dt=100A/ms,
-
V_Fp
V_FR=1.1xV_Fmax
-
Thermal resistance
R_th(j-a)
Junction to ambient
-
R_th(j-c)
Junction to case
-
Typ.
1.25
1.1
0.1
7
40
85
300
3.2
-
-
Max. Unit
1.55 V
-V
10 mA
200 mA
60 ns
140 ns
- ns
-V
7.5 °C/W
2.5 °C/W
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2015.04 - Rev.A