RFN20TF6SFH Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN20TF6SFH
zSerise
Standard Fast Recovery
zApplications
General rectification
zFeatures
1)Low switching loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
zDimensions(Unit : mm)
㻞㻚㻢㼼㻜㻚㻞
㻤^{㻢㻌 㻢}㻣^㻌
RFN20
䐟㻌 䐠㻌
TF6S
Õ±
Õ²
㻝㻚㻡㼼㻜㻚㻞
㻜㻚㻝㼼㻜㻚㻜㻞
䚷䚷䚷㻌㻜㻚㻝
㻞㻚㻜㼼㻜㻚㻞
㻾㻻㻴㻹㻌㻦㻌㻼㻹㻰㻿㻌
㻶㻱㻰㻱㻯㻌㻦㻌㻿㻻㻰㻙㻝㻜㻢㻌
䐟㻌 䐠㻌 _{〇㐀ᖺ᭶㻌}
ROHM : TO220NFM
Õ± Manufacture Year
Õ² Manufacture Week
Data Sheet
AEC-Q101 Qualified
zStructure
zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Symbol
V_RM
V_R
Io
Forward current surge peak
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
Conditions
Duty䍺0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=51°C
60Hz half sin wave , Non-repetitive at Tj=25°C
zElectrical Characteristics(Tj=25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
V_F
I_F=20A
䠉
Reverse current
Reverse recovery time
I_R
V_R=600V
䠉
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
䠉
Thermal resistance
Rth(j-c)
Junction to case
䠉
Limits
600
600
20
100
150
55 to 150
Typ.
Max.
1.25
1.55
0.05
10
40
60
䠉
2.5
Unit
V
V
A
A
°C
°C
Unit
V
μA
ns
°C/W
WWWROHMCOM
Ú2/(-#O,TD!LLRIGHTSRESERVED
1/4
2012.06 - Rev.A