RFN20TB4S Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN20TB4S
zSerise
Standard Fast Recovery
zApplications
General rectification
zDimensions(Unit : mm)
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Data Sheet
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zStructure
zFeatures
1)Low switching loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
RFN20T
B4S ^䐟
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2.54d0㻔.5㻝㻕 㻔㻞㻕 㻔㻟㻕 2.54d0.5
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ROHM : ä °O220FN
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zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Forward current surge peak
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
Conditions
Duty䍺0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=49°C
60Hz half sin wave , Non-repetitive at Tj=25°C
zElectrical Characteristics(Tj=25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery time
V_F
I_F=20A
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I_R
V_R=430V
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trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
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Thermal resistance
Rth(j-c)
Junction to case
䠉
Limits
430
430
20
100
150
55 to 150
Typ.
Max.
1.3
1.55
0.05
10
22
30
㸫
2.5
Unit
V
V
A
A
°C
°C
Unit
V
μA
ns
°C/W
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2012.06 - Rev.A