RFN1LAM7S Datasheet, PDF (1/7 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN1LAM7S
Data Sheet
lSeries
Standard Fast Recovery
lApplications
General rectification
lFeatures
1) Low forward voltage
2) Low switching loss
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
2.50±0.20
(1)
0.17±
0.10
0.05
lLand Size Figure (Unit : mm)
2.0
PMDTM
(2)
1.50±0.20
0.95±0.10
ROHM : PMDTM
JEDEC : SOD-128
: Manufacture Date
lTaping Dimensions (Unit : mm)
lStructure _Cathode
Anode
lAbsolute Maximum Ratings (T_l= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
V_RM
Reverse voltage
V_R
Average forward rectified current
I_o
Non-repetitive forward surge current I_FSM
Junction temperature
T_j
Storage temperature
T_stg
lElectrical Characteristics (T_j= 25°C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Reverse recovery time
trr
Thermal resistance
R_th(j-l)
Conditions
Limits Unit
Duty≦0.5
700
V
Direct reverse voltage
700
V
Glass epoxy board mounted,
60Hz half sin wave, resistive load ^{Tｌ=115°C}
0.8
A
60Hz half sin wave,
non-repetitive at T_j=25ºC
15
A
-
150
°C
-
-55 to +150 °C
Conditions
I_F=0.8A
V_R=700V
I_F=0.5A, I_R=1A, Irr=0.25×I_R
Junction to lead
Min. Typ. Max. Unit
0.8 1.15 1.5 V
-
-
1 mA
- 45 80 ns
-
- 25 °C/W
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/4
2016.09 - Rev.A