RFN1L7S Datasheet, PDF (1/5 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN1L7S
Series
Standard Fast Recovery
Dimensions (Unit : mm)
2.6±0.2
Applications
General rectification
86 65
①②
0.1±0.02
　　　 0.1
Features
1)Small power mold type.（PMDS）
2)Low switching loss
3)Low forward voltage
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture date
Construction
Silicon epitaxial planer
Taping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
Data Sheet
Land size figure (Unit : mm)
2.0
PMDS
Structure
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
Absolute maximum ratings (TI=25C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V_RM
D≤0.5
700
V
Reverse voltage
V_R
Direct voltage
700
V
Average rectified forward current
Io
Glass epoxy substrate mounted
R-road, 60Hz half sin wave
Tl=115°C
0.8
A
Forward current surge peak
I_FSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
15
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to 150 C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery time
V_F
I_F=0.8A
－
I_R
V_R=700V
－
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
－
Thermal resistance
Rth(j-l)
junction to lead
－
Typ.
Max.
1.15
1.5
0.01
1
45
80
－
23
2.8MAX
Unit
V
μA
ns
°C/W
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2011.10 - Rev.A