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RFN16T2DFH Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode | |||
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Data Sheet
Super Fast Recovery Diode
RFN16T2DFH
ï¬Applications
General rectification
ï¬Dimensions (Unit : mm)
ï¬Features
1)Cathode common Dual type. (TO-220)
2)Low VF
3)Low switching loss
10.0±0.3
ããã 0.1
AEC-Q101 Qualified
4.5±0.3
ããã 0.1
2.8±0.2
ããã 0.1
ï¬Structure
ï¬Construction
Silicon epitaxial planer
RFN16
T2D â
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
ROHM : TO220FN
â dot (year week factory)
2.6±0.5
ï¬Absolute maximum ratings (Tc=25ï°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Dutyâ¤0.5
Direct voltage
200
V
200
V
60Hz half sin wave, Resistance load,
Average rectified forward current
Io
Tc=100°C
16
A
1/2Io at per diode
Forward current surge peak
IFSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
100
A
Junction temperature
Tj
150
ï°C
Storage temperature
Tstg
ï55 to ï«150 ï°C
ï¬Electrical characteristics (Tj=25ï°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery time
VF
IF=8A
ï¼
IR
VR=200V
ï¼
trr
IF=0.5A,IR=1A,Irr=0.25ÃIR
ï¼
Thermal Resistance
Rth(j-c)
junction to case
ï¼
* per diode
Typ.
0.90
0.01
16
ï¼
Max.
0.98
10
30
2.5
Unit
V
μA
ns
°C/W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.12 - Rev.A
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