RFN16T2D Datasheet, PDF (1/5 Pages) Rohm – Super Fast Recovery Diode

Data Sheet
Super Fast Recovery Diode
RFN16T2D
Applications
General rectification
Dimensions (Unit : mm)
Features
1)Cathode common Dual type. (TO-220)
2)Low V_F
3)Low switching loss
10.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
Construction
Silicon epitaxial planer
RFN16
T2D ^①
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
ROHM : TO220FN
① dot (year week factory)
2.6±0.5
Structure
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V_RM
Reverse voltage
V_R
Duty≤0.5
Direct voltage
200
V
200
V
Average rectified forward current
Io
60Hz half sin wave, Resistance load,
1/2Io at per diode
Tc=100°C
16
A
Forward current surge peak
I_FSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
100
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to 150 C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery time
V_F
I_F=8A
－
I_R
V_R=200V
－
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
－
Thermal Resistance
Rth(j-c)
junction to case
－
* per diode
Typ.
0.90
0.01
16
－
Max.
0.98
10
30
2.5
Unit
V
μA
ns
°C/W
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2011.12 - Rev.A