RFN10TF6S Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN10TF6S
zSerise
Standard Fast Recovery
zApplications
General rectification
zFeatures
1)Low switching loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
zDimensions(Unit : mm)
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RFN10
䐟㻌 䐠㻌
TF6S
Õ±
Õ²
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䚷䚷䚷㻌㻜㻚㻝
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ROHM : TO220NFM
Õ± Manufacture Year
Õ² Manufacture Week
Data Sheet
zStructure
zAbsolu䡐e Maximum Ratings(Tc=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Forward current surge peak
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
Conditions
Duty䍺0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=82°C
60Hz half sin wave , Non-repetitive at Tj=25°C
zElectrical Characteristics(Tj=25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
V_F
I_F=10A
䠉
I_R
V_R=600V
䠉
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
䠉
Rth(j-c)
Junction to case
䠉
Limits
600
600
10
100
150
55 to 150
Typ.
Max.
1.25
1.55
0.05
10
30
50
䠉
3.5
Unit
V
V
A
A
°C
°C
Unit
V
μA
ns
°C/W
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2012.06 - Rev.A