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| RFN10T2DFH Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode | |||
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Super Fast Recovery Diode
RFN10NS8DFH
Datasheet
ï¬Serise
ï¬Dimensions (Unit : mm)
AEC-Q101 Qualified
ï¬Land Size Figure (Unit : mm)
Standard Fast Recovery
ï¬Application
General rectification
ï¬Features
1) Cathode common dual type
2) Low switching loss
3) Low VF
ROHM : TO263S (D2PAK)
JEITA : SC-83
1 : Manufacture Date
ï¬Taping Dimensions (Unit : mm)
ï¬Construction
Silicon epitaxial planar type
TO263S
ï¬Structure
Cathode
Anode Anode
ï¬Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Dutyâ¦0.5
800
V
Reverse voltage
VR
Direct reverse voltage
800
V
Average rectified foward current
Io
60Hz half sin wave , Resistive load
1/2Io per diode
Tc=75°C
10
A
Forward current surge peak
IFSM
60Hz half sin wave, one cycle
non-repetitive at Tj=25°C, per diode
60
A
Operating junction temperature
Tj
-
150
°C
Storage temperature
Tstg
-
ï55 to ï«150 °C
ï¬Electrical Characteristics (Tj = 25°C, per diode)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
Reverse recovery time
VF
IF=5A
0.95 1.6 2.1 V
IR
VR=800V
- 0.05 10 ïA
trr IF=0.5A, IR=1A, Irr=0.25ÃIR - 20 40 ns
Thermal resistance
Rth(j-c)
Junction to case
-
- 3.0 °C / W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.09 - Rev.A
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