RFN10NS6S Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFN10NS6S
zSerise
Standard Fast Recovery
zDimensions(Unit : mm)
zApplications
General rectification
RFN10
NS6S
Õ±
zFeatures
1)Low switching loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
ROHM : LPDS
JEITA : TO263S
Õ± _{Manufacture Date}
zTaping Dimensions(Unit : mm)
Data Sheet
zLand Size Figure(Unit : mm)
LPDS
zStructure
㼟
zAbsolu䡐e Maximum Ratings(Tc=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Forward current surge peak
Junction temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Storage temperature
Tstg
Conditions
Duty䍺0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=91°C
60Hz half sin wave , Non-repetitive at Tj=25°C ^(*1)
zElectrical Characteristics(Tj=25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
V_F
I_F=10A
䠉
I_R
V_R=600V
䠉
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
䠉
Rth(j-c)
Junction to case
䠉
Limits
Unit
600
V
600
V
10
A
100
A
150
°C
55 to 150
°C
(*1) 1-3pin common circuit
Typ.
1.25
0.05
30
䠉
Max.
1.55
10
50
3.0
Unit
V
μA
ns
°C/W
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2012.06 - Rev.A