RFN10NS3SFH Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RRFFNN101N0NSS3S3SFH
lSeries
Standard Fast Recovery
lDimensions (Unit : mm)
lApplications
General rectification
RFN10
NS3S
①
Data Sheet
AEC-Q101 Qualified
lLand size figure (Unit : mm)
lFeatures
1)Low switching loss
2)High current overload capacity
3)Cathode common single type
lConstruction
Silicon epitaxial planer
ROHM : LPDS
JEITA : TO263S
① Manufacture Year, Week and Day
lTaping dimensions (Unit : mm)
lStructure
②
①
③
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V_RM
Duty≤0.5
350
V
Reverse voltage
V_R
Direct voltage
350
V
Average rectified forward current
Io
60Hz half sin wave resistive load Tc=88°C
10
A
Forward current surge peak
I_FSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C (*)
100
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
-55 to +150 C
(*) 1-3pin common circuit
lElectrical characteristics (Tj=25C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery time (*)
Thermal resistance
V_F
I_F=10A
－
I_R
V_R=350V
－
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
－
Rth(j-c)
junction to case
－
(*) Design assurance without measurement.
Typ.
Max.
1.25
1.5
0.05
10
22
30
－
4.0
Unit
V
μA
ns
°C/W
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2011.10 - Rev.A