RFN10B3S Datasheet, PDF (1/5 Pages) Rohm – Super Fast Recovery Diode

Data Sheet
Super Fast Recovery Diode
RFN10B3S
zSerise
Standard Fast Recovery
zApplications
General rectification
zDimensions(Unit : mm)
C0.5
6.5ã¼¼0.2
5.1ã¼¼0.2
㻌 㻌 㻌 0.1
2.3ã¼¼0.2
㻌 㻌 㻌 0.1
0.5ã¼¼0.1
zFeatures
1)Power mold type(CPD)
2)Low switching loss
3)High current overload capacity
zConstruction
Silicon epitaxial planer type
Õ±
0.9
(1) (2) (3)
0.75
0.65ã¼¼0.1
2.3ã¼¼0.2 2.3ã¼¼0.2
0.5ã¼¼0.1
1.0ã¼¼0.2
ROHM : CPD
JEITA : SC-63
Õ± _Manufacture
zTaping Dimensions(Unit : mm)
㻞㻚㻜㼼㻜㻚㻜㻡
㻠㻚㻜㼼㻜㻚㻝
㻤㻚㻜㼼㻜㻚㻝
zLand Size Figure(Unit : mm)
6.0
2.0
1 6 1.6
PMDS
CPD
2.3 2.3
zStructure
φ 㻝㻚㻡㻡㼼㻜㻚㻝
䚷䚷䚷䚷䚷㻌㻌㻜
㻜㻚㻠㼼㻜㻚㻝
㼀㻸
zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Forward current surge peak
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
zElectrical Characteristics(Tj=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V_F
I_R
trr
Rth(j-c)
㻢㻚㻤㼼㻜㻚㻝
㻤㻚㻜㼼㻜㻚㻝
φ 㻟㻚㻜㼼㻜㻚㻝
㻞㻚㻣㼼㻜㻚㻞
Conditions
Duty䍺0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=34°C
60Hz half sin wave , Non-repetitive at Tj=25°C ^(*1)
Limits
Unit
350
V
350
V
10
A
80
A
150
°C
55 to 150
°C
(*1) 1-3pin common circuit
Conditions
I_F=10A
V_R=350V
I_F=0.5A,I_R=1A,Irr=0.25×I_R
Junction to case
Min.
Typ.
Max.
Unit
䠉
1.1
1.5
V
䠉
0.05
10
μA
䠉
20
30
ns
䠉
䠉
6.0
°C/W
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2012.06 - Rev.A