RF601T2D_11 Datasheet, PDF (1/4 Pages) Rohm – Fast recovery diode

Data Sheet
Fast recovery diode
RF601T2D
Applications
General rectification
Dimensions (Unit : mm)
Features
1) Cathode common type.(TO-220)
2) Ultra Low V_F
3) Very fast recovery
4) Low switching loss
10.0±0.3
　　　 0.1
 Structure
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
(1) (2) (3)
Construction
Silicon epitaxial planar
①
1.2
1.3
0.8
(1) (2) (3)
ROHM : ï¼´O220FN
① Manufacture Date
0.7±0.1
0.05
2.6±0.5
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
200
V
Reverse voltage (DC)
V_R
200
V
Average rectified forward current (*1)
Io
6
A
Forward current surge peak (60Hz/1cyc)
I_FSM
60
A
Junction temperature
Tj
150
C
Storage temoerature
Tstg
55 to 150
C
(*1)Business frequency, Rating of R-load, Tc=132CMAX. 1/2 Io per diode
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol Min. Typ. Max.
V_F
- 0.87 0.93
I_R
- 0.01 10
trr
-
18
25
Unit
Conditions
V
I_F=3A
μA
V_R=200V
ns
I_F=0.5A,I_R=1A,Irr=0.25*I_R
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2011.05 - Rev.C