RF505TF6S_11 Datasheet, PDF (1/5 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RF505TF6S
Series
Standard Fast Recovery
Dimensions (Unit : mm)
Applications
General rectification
Features
1)Low switching loss
2)High current overload capacity
RF505
TF6S
①
②
Construction
Silicon epitaxial planer
ROHM : TO220NFM
① Manufacture Year
② Manufacture Week
Data Sheet
Structure
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V_RM
Duty≤0.5
600
V
Reverse voltage
V_R
Direct voltage
600
V
Average rectified forward current
Io
60Hz half sin wave, Resistance load, Tc=125°C
5
A
Forward current surge peak
I_FSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
80
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to 150 C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery time
V_F
I_F=5A
－
I_R
V_R=600V
－
trr
I_F=0.5A,I_R=1A,Irr=0.25×I_R
－
Thermal resistance
Rth(j-c)
junction to case
－
Typ.
Max.
1.3
1.7
0.03
10
22
30
－
3
Unit
V
μA
ns
°C/W
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2011.10 - Rev.A