RF501B2S_09 Datasheet, PDF (1/4 Pages) Rohm – Fast Recovery Diode

Fast Recovery Diode
RF501B2S
zApplications
General rectification
zDimensions（Unit : mm ）
zFeatures
1)Power mold type.(CPD)
2)High reliability
3)Low Vf
4)Very fast recovery
5)Low switching loss
zConstruction
Silicon epitaxial planer
zTaping specifications(Unit : mm)
zLand size figure(Unit : mm)
6.0
1.6 1.6
CPD
2.3 2.3
zStructure
(2)
(1) (3)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
200
V
Reverse voltage (DC)
V_R
200
V
Average rectified forward current (*1)
Io
5
A
Forward current surge peak (60Hz / 1cyc)(*1 I_FSM
40
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55～+150
℃
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=128°C
zElectrical characteristics(Ta=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol
V_F
I_R
trr
Min. Typ. Max.
-
0.86 0.92
-
0.015 1
-
15 30
Unit
Conditions
V
I_F=5A
µA
V_R=200V
ns
I_F=0.5A,I_R=1A,Irr=0.25*I_R
www.rohm.com
©2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.11 - Rev.G