RES100N03 Datasheet, PDF (1/4 Pages) Rohm – Switching (30V, 10A)

Transistors
Switching (30V, 10A)
RES100N03
RES100N03
zFeatures
1) Low Qg.
2) Low on-resistance.
3) Exellent resistance to damage from static electricity.
zStructure
Silicon N-channel
MOS FET
zEquivalent circuit
(8) (7) (6) (5)
(8) (7) (6) (5)
zExternal dimensions (Units : mm)
Max.1.75
(5)
(4)
(8)
(1)
36..90_{−+−+}00.1.35
0.15
1.5_−+0.1
0.5_−+0.1
ROHM : SOP8
Each lead has same dimensions
(4)
∗
(1) (2) (3)
∗Gate Protection Diode.
(1) (2) (3) (4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗ A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDSS
30
V
VGSS
±20
V
Continuous
ID
10
A
Drain Current
Pulsed
IDP ^∗
40
A
Reverse Drain
Continuous
IDR
10
A
Current
Pulsed
IDRP^∗
40
A
Source Current ^Continuous
Is
1.3
A
(Body Diode)
Pulsed
Isp ^∗
5.2
A
Total Power Dissipation (TC=25°C)
PD
2
W
Channel Temperature
Tch
150
°C
Storage Temperature
∗PW≤10µs, Duty cycle≤1%
Tstg
−55~+150
°C