RDX100N60 Datasheet, PDF (1/3 Pages) Rohm – 10V Drive Nch MOS FET

Transistors
10V Drive Nch MOS FET
RDX100N60
RDX100N60
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low on-resistance.
2) Low input capacitance.
3) Excellent resistance to damage from static electricity.
zApplications
Switching
zPackaging specifications
Package
Bulk
Type
Code
−
Basic ordering unit (pieces) 500
RDX100N60
zExternal dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1)Gate
(2)Drain
(3)Source
1.2
1.3
0.8
2.54
2.54
0.75
2.6
(1) (2) (3)
zInner circuit
∗1
∗2
(1)
(2)
(3)
∗1 GATE PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
V
Drain current
Continuous
ID ^∗1
±10
A
Pulsed
IDP ^∗2
±40
A
Source current
Continuous
IS
10
A
(Body diode)
Pulsed
ISP ^∗2
40
A
Avalanche current
IAS ^∗3
10
A
Avalanche energy
EAS ^∗4
230
mJ
Total power dissipation (Tc=25°C)
PD
45
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Limited only by maximum temperature allowed ∗2 Pw 10µs, Duty cycle 1%
∗3 L = 4.0mH VDD=90V Rg=25Ω ∗4 L = 4.0mH VDD=90V Rg=25Ω startingTch=25°C
(1) Gate
(2) Drain
(3) Source
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
2.78
Unit
°C/W
1/2