RDX080N50 Datasheet, PDF (1/3 Pages) Rohm – 10V Drive Nch MOS FET

Transistors
10V Drive Nch MOS FET
RDX080N50
RDX080N50
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low on-resistance.
2) Low input capacitance.
3) Excellent resistance to damage from static electricity.
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RDX080N50
Bulk
−
500
zExternal dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1)Gate
(2)Drain
(3)Source
1.2
1.3
0.8
2.54
2.54 0.75
2.6
(1) (2) (3)
zInner circuit
*1
*2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
500
Gate-source voltage
Drain current
VGSS
±30
Continuous
ID ^∗1
±8
Pulsed
IDP ^∗2
±32
Source current
(Body diode)
Avalanche current
Avalanche energy
Continuous
IS
8
Pulsed
ISP ^∗2
32
IAS ^∗3
8
EAS ^∗4
85
Total power dissipation (Tc=25°C)
PD
40
Channel temperature
Tch
150
Range of storage temperature
Tstg
−55 to +150
∗1 Limited only by maximum temperature allowed ∗2 Pw 10µs, Duty cycle 1%
∗3 L = 2.3mH VDD=90V Rg=25Ω ∗4 L = 2.3mH VDD=90V Rg=25Ω starting Tch=25°C
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
3.125
(1)
(2)
(3)
∗1 GATE PROTECTION DIODE
*2 BODY DIODE
(1) Gate
(2) Drain
(3) Source
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Unit
°C/W
1/2