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RDX050N50 Datasheet, PDF (1/3 Pages) Rohm – 10V Drive Nch MOS FET | |||
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Transistors
10V Drive Nch MOS FET
RDX050N50
RDX050N50
Structure
Silicon N-channel MOS FET
Features
1) Low on-resistance.
2) Low input capacitance.
3) Excellent resistance to damage from static electricity.
Applications
Switching
Packaging specifications
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External dimensions (Unit : mm)
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Inner circuit
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Absolute maximum ratings (Ta=25 C)
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1/2
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