RDS070N03 Datasheet, PDF (1/4 Pages) Rohm – Excellent Resistance to damage from static electricity

Transistors
Switching (30V, 7A)
RDS070N03
RDS070N03
zFeatures
1) Low Qg.
2) Low on-resistance.
3) Excellent resistance to damage from static electricity.
zStructure
Silicon N-channel
MOS FET
zEquivalent circuit
(8) (7) (6) (5)
(8) (7) (6) (5)
zExternal dimensions (Units : mm)
Max.1.75
(5)
(4)
(8)
(1)
36..90_{−+−+}00.1.35
0.15
1.5_−+0.1
0.5_−+0.1
ROHM : SOP8
Each lead has same dimensions
(4)
(1) (2) (3) (4)
∗
(1) (2) (3)
∗^{Gate Protection Diode.}
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗ A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous
ID
7
A
Drain Current
Pulsed
IDP^∗
28
A
Reverse Drain
Continuous
IDR
7
A
Current
Pulsed
IDRP^∗
28
A
Source Current ^Continuous
Is
1.6
A
(Body Diode)
Pulsed
Isp^∗
6.4
A
Total Power Dissipation(Tc=25°C)
PD
2.5
W
Channel Temperature
Storage Temperature
∗Pw≤10µs, Duty cycle≤1%
Tch
150
°C
Tstg
−55~+150
°C