RDN100N20 Datasheet, PDF (1/4 Pages) Rohm – Switching (200V, 10A)

Transistors
Switching (200V, 10A)
RDN100N20
RDN100N20
!Features
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
!Application
Switching
!Structure
Silicon N-channel
MOS FET
!External dimensions (Unit : mm)
TO-220FN
10.0
+0.3
−0.1
3.2±0.2
4.5
+0.3
−0.1
2.8
+0.2
−0.1
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54±0.5
2.54±0.5
0.75
+0.1
−0.05
(1) (2) (3)
2.6±0.5
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
10
A
Drain Current
Pulsed
IDP ^∗1
40
A
Reverse Drain
Continuous
IDR
10
A
Current
Pulsed
IDRP ^∗1
40
A
Avalanche Current
IAS ^∗2
10
A
Avalanche Energy
EAS ^∗2
120
mJ
Total Power Dissipation (TC=25°C)
PD
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
!Equivalent circuit
Drain
Gate
∗Gate
Protection
Diode
Source
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
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