RDN080N25 Datasheet, PDF (1/4 Pages) Rohm – Switching (250V, 8A)

Transistors
Switching (250V, 8A)
RDN080N25
RDN080N25
zFeatures
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
zApplication
Switching
zStructure
Silicon N-channel
MOS FET
zExternal dimensions (Units : mm)
TO-220FN
10.0
+0.3
−0.1
3.2±0.2
4.5
+0.3
−0.1
2.8
+0.2
−0.1
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54±0.5
2.54±0.5
0.75
+0.1
−0.05
(1) (2) (3)
2.6±0.5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDSS
250
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
8
A
Drain Current
Pulsed
IDP ^∗1
32
A
Reverse Drain
Continuous
IDR
8
A
Current
Pulsed
IDRP ^∗1
32
A
Avalanche Current
IAS ^∗2
8
A
Avalanche Energy
EAS ^∗2
136
mJ
Total Power Dissipation (TC=25°C)
PD
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
zEquivalent Circuit
Drain
Gate
∗Gate
Protection
Diode
Source
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
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