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RDN050N20 Datasheet, PDF (1/4 Pages) Rohm – Switching (200V, 5A) | |||
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Transistors
Switching (200V, 5A)
RDN050N20
RDN050N20
!Features
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
!Application
Switching
!Structure
Silicon N-channel
MOS FET
!External dimensions (Units : mm)
TO-220FN
10.0
+0.3
â0.1
3.2±0.2
4.5
+0.3
â0.1
2.8
+0.2
â0.1
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54±0.5
2.54±0.5
0.75
+0.1
â0.05
(1) (2) (3)
2.6±0.5
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
5
A
Drain Current
Pulsed
IDP â1
20
A
Reverse Drain
Continuous
IDR
5
A
Current
Pulsed
IDRP â1
20
A
Avalanche Current
IAS â2
5
A
Avalanche Energy
EAS â2
75
mJ
Total Power Dissipation (TC=25°C)
PD
30
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
â55 to 150
°C
â1 Pw ⤠10µs, Duty cycle ⤠1%
â2 L 4.5mH, VDD=50V, RG=25â¦, 1Pulse, Tch=25°C
!Equivalent Circuit
Drain
Gate
âGate
Protection
Diode
Source
âA protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
1/3
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