RDD050N20 Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

Transistors
10V Drive Nch MOSFET
RDD050N20
RDD050N20
zStructure
Silicon N-channel
MOSFET
zFeatures
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
zApplication
Switching
zDimensions (Unit : mm)
CPT3
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Source)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RDD050N20
Taping
TL
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
±5
A
Drain Current
Pulsed
IDP ^∗1
±20
A
Source Current
Continuous
IS
5
A
(Body Diode)
Pulsed
ISP ^∗1
20
A
Avalanche Current
IAS ^∗2
5
A
Avalanche Energy
EAS ^∗2
75
mJ
Total Power Dissipation (TC=25°C)
PD
20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
6.25
zEquivalent Circuit
∗2
∗1 BODY DIODE
∗1 ∗2 GATE PROTECTION
DIODE
(1)GATE
(2)DRAIN
(3)SOURCE
(1)
(2)
(3)
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Unit
°C/W
1/5