RCX450N20 Datasheet, PDF (1/7 Pages) Rohm – 10V Drive Nch MOSFET

10V Drive Nch MOSFET
RCX450N20
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High speed switching.
3) Gate-source voltage V_GSS garanteed to be ±30V
4) High Power Package (TO-220FM).
Data Sheet
 Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
1.2
1.3
0.8
2.54
2.54
0.75
2.6
(1) (2) (3)
 Application
Switching
 Packaging specifications
Package
Bulk
Type _Code
-
Basic ordering unit (pieces) 500
RCX450N20

 Inner circuit
∗1
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 BODY DIODE
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation(Tc=25C)
Channel temperature
Range of storage temperature
V_DSS
200
V
V_GSS
30
V
I_D ^*3
45
A
I_DP ^*1
180
A
I_S ^*3
45
A
I_SP ^*1
180
A
I_AS ^*2
22.5
A
E_AS ^*2
160
mJ
P_D
40
W
Tch
150
C
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L≒500H, V_DD=50V, R_G=25, starting Tch=25°C
*3 Limited only by maximum temperature allowed.
 Thermal resistance
Parameter
Channel to Case
* T_C=25°C
Symbol
Rth (ch-c)^*
Limits
3.12
Unit
C / W
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2011.09 - Rev.A