RCJ450N20 Datasheet, PDF (1/7 Pages) Rohm – 10V Drive Nch MOSFET

Data Sheet
10V Drive Nch MOSFET
RCJ450N20
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
 Dimensions (Unit : mm)
LPTS
10.1
4.5 _1.3
1.24
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
 Application
Switching
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
RCJ450N20
Taping
TL
1000

 Inner circuit
∗1
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
200
V
V_GSS
30
V
I_D ^*3
45
A
I_DP ^*1
180
A
I_S ^*3
45
A
I_SP ^*1
180
A
I_AS ^*2
22.5
A
E_AS ^*2
160
mJ
P_D ^*4
40
W
Tch
150
C
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L 500H, V_DD=50V, R_G=25, T_ch=25C
*3 Limited only by maximum temperature allowed.
*4 T_C=25C
 Thermal resistance
Parameter
Channel to Case
* T_C=25°C
* Limited only by maximum temperature allowed.
Symbol
Rth (ch-c)^*
Limits
3.12
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 BODY DIODE
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2011.10 - Rev.A