RCJ330N25 Datasheet, PDF (1/7 Pages) Rohm – 10V Drive Nch MOSFET

10V Drive Nch MOSFET
RCJ330N25
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage
V_GSS garanteed to be ±30V .
4) High package power.
Data Sheet
 Dimensions (Unit : mm)
LPTS
10.1
4.5 _1.3
1.24
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RCJ330N25
Taping
TL
1000

 Inner circuit
∗1
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 BODY DIODE
Absolute maximum ratings (Ta  25°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation (Tc=25C)
Channel temperature
Range of storage temperature
V_DSS
250
V
V_GSS
30
V
I_D ^*3
33
A
I_DP ^*1
132
A
I_S *3
26
A
I_SP ^*1
104
A
I_AS ^*2
16.5
A
E_AS ^*2
74.8
mJ
P_D
40
W
Tch
150
C
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L≒500H, V_DD=50V, Rg=25, starting Tch=25°C
*3 Limited only by maximum temperature allowed.
 Thermal resistance
Parameter
Channel to Case
* T_C=25°C
Symbol Limits
Rth(ch-c)^* 3.12
Unit
C / W
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2011.10 - Rev.A