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| RCD040N25 Datasheet, PDF (1/7 Pages) Rohm – 10V Drive Nch MOSFET | |||
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Data Sheet
10V Drive Nch MOSFET
RCD040N25
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
ï¬ Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
0.9 2.3
0.65
(1)
(2)
(3) 2.3
0.5
1.0
ï¬ Application
Switching
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RCD040N25
Taping
TL
2500
ï¡
ï¬ Inner circuit
â1
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
250
V
VGSS
ï±30
V
ID *3
ï±4
A
IDP *1,3
ï±16
A
IS
4
A
ISP *1
16
A
IAS *2
2
A
EAS *2
1.61
mJ
PD *4
20
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 L 500ïH, VDD=50V, RG=25ï, Tch=25ï°C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25ï°C
ï¬ Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)*
* TC=25°C
* Limited only by maximum channel temperature allowed.
Limits
6.25
Unit
ï°C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
ïª1 BODY DIODE
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.11 - Rev.A
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