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RBS2MM40C Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode
Schottky Barrier Diode
RBS2MM40C
lApplications
General rectification
lDimensions (Unit : mm)
1.6±0.1
0.1±00..015
Data Sheet
lLand Size Figure (Unit : mm)
1.2
lFeatures
1) Small power mold type
(PMDU)
2) High reliability
3) Super low VF
lConstruction
Silicon epitaxial planar type
0.9±0.1
0.8±0.1
ROHM : PMDU
JEDEC : SOD-123FL
: Manufacture Date
PMDU
(1)Cathode
lStructure
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φf 1.55±0.05
(2)Anode
0.25±0.05
1.81±0.1
4.0±0.1
φf 1.0±0.1
1.5MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
40
V
Reverse voltage
VR
Direct reverse voltage
20
V
Average forward rectified current
Io
Glass epoxy board mounted, 60Hz half sin wave,
resistive load , Tc=90ºC Max.
2.0
A
Non-repetitive forward current surge peak IFSM
60Hz half sin wave, non-repetitive at
Ta=25ºC, 1cycle
45
A
Operating junction temperature (1)
Tj
-
125
°C
Storage temperature
Tstg
-
-55 to +125 °C
Note (1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj < 1/Rth(j-a).
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Conditions
IF=2.0A
VR=20V
Min. Typ. Max. Unit
- 0.35 0.39 V
- 300 600 mA
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2016.05 - Rev.B