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RBS2LAM40A Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode
Schottky Barrier Diode
RBS2LAM40A
Data Sheet
lApplications
General rectification
lFeatures
1) Small power mold type
(PMDTM)
2) High reliability
3) Super low VF
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
2.50±0.20
(1)
0.17±
0.10
0.05
lLand Size Figure (Unit : mm)
2.0
PMDTM
(2)
1.50±0.20
0.95±0.10
ROHM : PMDTM
JEDEC : SOD-128
: Manufacture Date
lTaping Dimensions (Unit : mm)
(1) Cathode
lStructure
(2) Anode
2.00 ±0.05
4.0 ±0.1
φ1.5
+0.1
-0.0
0.25 ±0.05
φ1.5
+0.1
-0.0
2.8 ±0.05
4.0 ±0.1
1.25 ±0.10
lAbsolute Maximum Ratings (Tl= 25°C)
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
VRM
Duty≦0.5
Reverse voltage
VR
Average forward rectified current
IO
Non-repetitive forward current surge peak IFSM
Operating junction temperature (1)
Tj
Direct reverse voltage
Glass epoxy board mounted, 60Hz half
sin wave, resistive load, Tc=95ºC Max.
60Hz half sin wave, non-repetitive at
Ta=25ºC, 1cycle
-
Storage temperature
Tstg
-
Note (1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj < 1/Rth(j-a).
Limits Unit
40
V
20
V
2.0
A
40
A
125
°C
-55 to +125 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Conditions
IF=2.0A
VR=20V
Min. Typ. Max. Unit
- 0.42 0.48 V
- 150 400 mA
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2016.03 - Rev.A